Patterning of vertical nanowire transistor channel and gate with directed self assembly

ABSTRACT

Directed self-assembly (DSA) material, or di-block co-polymer, to pattern features that ultimately define a channel region a gate electrode of a vertical nanowire transistor, potentially based on one lithographic operation. In embodiments, DSA material is confined within a guide opening patterned using convention lithography. In embodiments, channel regions and gate electrode materials are aligned to edges of segregated regions within the DSA material.

This is a Continuation of application Ser. No. 14/733,925 filed Jun. 8,2015 which is Continuation of application Ser. No. 13/719,113 filed Dec.18, 2012 now U.S. Pat. No. 9,054,215 issued Jun. 9, 2015.

TECHNICAL FIELD

Embodiments of the invention generally relate to transistor fabricationfor microelectronics, and more particularly pertain to patterning of avertical nanowire transistor using directed self-assembly (DSA).

BACKGROUND

In vertically oriented transistors, well-controlled material layerthickness define functional lengths, such as gate length (L_(g)), andmaterial composition may be advantageously tailored to achieve band gapand mobility differentiation. Current drive can also be continuouslyscaled by lithographic patterning of the channel width (W_(g)) andcorresponding cross-section of the nanowire. However, in practicalapplications, one may need to print nanowire features (e.g., holes) onthe order of 15 nm or less in diameter while having very good criticaldimension (CD) uniformity, good circularity, and of minimal featurepitch for highest density. In addition the channel pattern must beaccurately aligned to the gate stack and contact metallization.

Lithographic printing of holes less than 15 nm with sufficient CDuniformity, circularity, and pitch is beyond the capability of known ArFor EUV resist. Techniques whereby holes are printed larger and thenshrunk fail to achieve desired pitches (e.g., <30 nm). Such pitches arealso below the resolution of even two mask patterning techniques, and assuch would require at least three mask patterning steps along with avery aggressive shrink process employing an expensive lithographytoolset.

Techniques to pattern a vertical nanowire transistor to dimensions below15 nm and pitches below 30 nm, which are manufacturable at lower costare therefor advantageous.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention are illustrated by way of example,and not limitation, in the figures of the accompanying drawings inwhich:

FIG. 1 is an isometric illustration of a vertical nanowire transistor,in accordance with an embodiment;

FIG. 2 is a flow diagram illustrating a method of forming a verticalnanowire transistor, in accordance with an embodiment;

FIGS. 3A, 3B, 3C, 3D, and 3E illustrate plan views of single-channelstructures formed as operations in the method of FIG. 2 are performed,in accordance with an embodiment;

FIGS. 4A, 4B, 4C, 4D, and 4E illustrate cross-sectional views of thestructures illustrated in FIG. 3A-3E, in accordance with an embodiment;

FIGS. 5A, 5B, 5C, 5D, 5E, and 5F illustrate plan views of single-channelstructures formed as operations in the method of FIG. 2 are performed,in accordance with an embodiment;

FIGS. 6A, 6B, 6C, 6D, 6E, and 6F illustrate cross-sectional views of thestructures illustrated in FIG. 5A-5D, in accordance with an embodiment;

FIGS. 7A, 7B, and 7C illustrate plan views of dual-channel structuresformed as operations in the method of FIG. 2 are performed, inaccordance with an embodiment;

FIGS. 8A, 8B, and 8C illustrate cross-sectional views of the structuresillustrated in FIG. 7A-7C, in accordance with an embodiment;

FIGS. 9A, 9B, 9C, 9D, and 9E illustrate cross-sectional views ofsingle-channel structures formed as operations in the method of FIG. 2are performed, in accordance with an embodiment;

FIGS. 10A, 10B, 10C, 10D, 10E, 10F and 10G illustrate cross-sectionalviews of single-channel structures formed as operations in the method ofFIG. 2 are performed, in accordance with an embodiment;

FIG. 11 is a functional block diagram of a mobile computing platformemploying non-planar transistors, in accordance with an embodiment ofthe present invention; and

FIG. 12 illustrates a functional block diagram of computing device inaccordance with one embodiment.

DETAILED DESCRIPTION

In the following description, numerous details are set forth. It will beapparent, however, to one skilled in the art, that the present inventionmay be practiced without these specific details. In some instances,well-known methods and devices are shown in block diagram form, ratherthan in detail, to avoid obscuring the present invention. Referencethroughout this specification to “an embodiment” or “in one embodiment”means that a particular feature, structure, function, or characteristicdescribed in connection with the embodiment is included in at least oneembodiment of the invention. Thus, the appearances of the phrase “in anembodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, functions, orcharacteristics may be combined in any suitable manner in one or moreembodiments. For example, a first embodiment may be combined with asecond embodiment anywhere the two embodiments are not structurally orfunctionally exclusive of the other.

The terms “coupled” and “connected,” along with their derivatives, maybe used herein to describe structural relationships between components.It should be understood that these terms are not intended as synonymsfor each other. Rather, in particular embodiments, “connected” may beused to indicate that two or more elements are in direct physical orelectrical contact with each other. “Coupled” my be used to indicatedthat two or more elements are in either direct or indirect (with otherintervening elements between them) physical or electrical contact witheach other, and/or that the two or more elements co-operate or interactwith each other (e.g., as in a cause an effect relationship).

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one material layer with respect to other layers. Assuch, for example, one layer disposed over or under another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. Moreover, one layer disposed between two layers maybe directly in contact with the two layers or may have one or moreintervening layers. In contrast, a first layer “on” a second layer is indirect contact with that second layer.

FIG. 1 is an isometric illustration of an exemplary vertical nanowiretransistor 101, which may be fabricated in accordance with embodimentsof the present invention. For the vertical nanowire transistor 101, asemiconductor nanowire is vertically oriented with respect to thesubstrate 105 so that the longitudinal length L is along the z dimension(perpendicular to a surface plane of the substrate 105) and the width Wdefines an area of the substrate 105 occupied by the nanowire. As for alaterally oriented transistor, the vertical transistor 101 comprises oneor more semiconductor materials along the longitudinal length Lcorresponding to functional regions of the transistor including thechannel region 145B disposed between an extrinsic source/drain region135B, source/drain region 130B and source/drain region 120B. Dependingon the embodiment a drain of the transistor 101 may be “down,” on thesubstrate 105, or the transistor may be inverted to have “source down.”In the vertical form, the transistor 101 has critical dimensions, suchas channel length and L_(g) (i.e., portions of the longitudinal lengthL) defined by material layer thickness, which can be verywell-controlled (e.g., to 5-10 Å) by either epitaxial growth processes,implantation processes, or deposition processes.

Generally, substrate 105 and the first and second semiconductor materiallayers 111C, 111B may be any known in the art including group IVmaterials (e.g., Si, Ge, SiGe), III-N materials (e.g., GaN, AlGaN,etc.), or group III-V materials (e.g., InAlAs, AlGaAs, etc.). Thedrain/source regions 130B, 120B are of semiconductor material layers111A, 111D, which may be the same material as for the channel region145B, or a different material. The source/drain contact 122B may includea semiconductor 111E disposed on the source/drain region 120, such as ap+ tunneling layer and/or a highly doped (e.g., n+) low band gap cappinglayer. A low resistivity ohmic contact metal may further be included inthe source contact 122B.

The transistor 101 includes a gate stack 150B coaxially wrappingcompletely around the nanowire within the channel region 145B.Similarly, the source/drain contacts 122B and 132B are also illustratedas coaxially wrapping around the source/drain regions 120B, 130B, thoughthey need not. Disposed between the gate stack 150B, a first dielectricspacer (not depicted) is disposed on the source/drain contact 132B andcoaxially wraps completely around the extrinsic source/drain region 135Balong a first longitudinal length. A second dielectric spacer 156 isdisposed on the gate stack 150B and coaxially wraps completely aroundthe source/drain region 120B along a second longitudinal length with thesource/drain contact 132B disposed on the second dielectric spacer.

FIG. 2 is a flow diagram illustrating a method 201 of forming a verticalnanowire transistor, such as the transistor 101, in accordance with anembodiment. Generally, the method 201 entails employing a directedself-assembly (DSA) material, such as a di-block co-polymer, to patternfeatures that ultimately define a channel region of a vertical nanowiretransistor based on one lithographic operation, potentially without needfor a scanner.

The method 201 begins with lithographically patterning a guide openingin a mask layer at operation 205. The guide opening is to provide anedge that a DSA material aligns to, and is more particularly a closedpolygon, and advantageously curved, and more particularly circular. Anynumber of guide openings may be concurrently printed at operation 205,for example a 1-D or 2-D array of guide openings may be printed usingany conventional lithographic process know in the art. As used herein, a1-D array entails a row or column of guide openings with minimum pitchbetween adjacent ones in the row or column dimension and more thanminimum pitch between adjacent rows or columns, while a 2-D arrayentails rows and columns of guide openings with minimum pitch betweenall guide openings in both row and column dimensions. The size and shapeof the guide can be changed to allow more than one channel hole to bepatterned in a given guide layer opening as for example FIG. 7 b.

FIGS. 3A-3D illustrate plan views of a single-channel transistorstructure formed as operations in the method 201 are performed, inaccordance with an embodiment. A circular guide opening 315 is shown inFIG. 3A, and represents one repeating unit for a 1-D or 2-D array thatis printed at operation 205. FIGS. 4A-4D illustrate cross-sectionalviews of the structures illustrated in FIG. 3A-3D, respectively, alongthe A′-A line depicted in FIG. 3A. In the exemplary embodiment, thecircular guide opening 315 has a critical dimension (CD₁) of no morethan 20 nm with the polygon edge 306 defining a hole 305 (FIG. 4A)through a thickness of the mask 340, which may be a photoresist orhardmask material. Any conventional resist formulation suitable for thelithography tool employed may be utilized in photoresist embodiments.The mask 340 is disposed over a semiconductor layer having a z-heightthickness (T₁) corresponding to a desired transistor channel length(L_(g)) that is to provide the channel region of the nanowiretransistor. For the exemplary embodiment illustrated in FIG. 4A, themask 340 is disposed directly on the channel semiconductor layer 315(e.g., single crystalline silicon, SiGe, etc.), although an interveningmaterial layer, such as a hardmask material layer (e.g., Si_(x)N_(y),SiO₂, etc.), may be disposed between the photoresist layer 340 andchannel semiconductor layer 315.

Returning to FIG. 2, the method 201 continues with operation 210 wherethe DSA material is deposited into the guide opening(s) formed atoperation 205. In preparation for application of the DSA material thesurface of layer 315 may be treated so that it is equallyattractive/repulsive to the polymer A and polymer B. As shown in FIGS.3B and 4B, a DSA material 350 fills the guide opening 315 and iscontained by the guide opening edges 306. The DSA material 350 generallycomprises at least first and second polymers (i.e., a polymer A and apolymer B). When applied over the substrate, for example by spincoating, the polymers A and B are in an intermixed state. Beyond thebasic chemistry of the polymers A and B, the polymers A and B may eachbe chosen to have desired distribution of molecular weights and the DSAmaterial 350 may be selected to have a desired polymer A-to-polymer Bratio (A:B), as a function of the geometry and CD of the guide operation315 and the desired CD of the transistor channel region. While any DSAmaterial known in the art may be utilized, in the exemplary embodimentone of the polymer A and polymer B is present in a photoresist employedas the mask 340. For example, where the mask 340 comprises polystyrene,polymer A or polymer B is also polystyrene. In one such embodiment, theother of the polymers is PMMA (poly(methyl methacrylate)).

The method 201 (FIG. 2) continues with operation 215 where the DSAmaterial is segregated into interior and exterior polymer regions.Segregation of the polymer A from the polymer B occurs while the DSAmaterial 350 is annealed at an elevated temperature for a durationsufficient to permit adequate migration of the polymers, as a functionof the dimensions of the guide opening 315, and the molecular weights ofthe polymers, etc. With the guide opening 315 enclosing the DSA material350, segregation can be engineered so as one of the polymers (e.g.,polymer A) migrates away from the guide edge 306 while the other of thepolymers (e.g., polymer B) migrates toward the guide edge 306. Aninterior polymer region 350A comprising predominantly a first polymer isthen completely surrounded by an exterior polymer region 350B comprisingpredominantly a second polymer. In the exemplary embodiment shown inFIGS. 3C and 4C, the interior polymer region 350A is spaced apart fromthe guide opening edge to have a diameter of CD₂, reduced from that ofCD₁. For appropriately chosen DSA constituents, under layer and guideopening edge surface properties, the interior polymer region 350A forminteger numbers of substantially identical cylinders or spheres embeddedwithin the exterior polymer region 350B. While in the exemplary singlechannel embodiment illustrated in FIGS. 3A-3E a single interior polymerregion 350A is formed, multiples of such regions may be formed where theguide opening is sized sufficiently large in at least one dimension.With the segregation mechanics being a well-controlled function of theco-polymer properties of the DSA material, the interior polymerregion(s) maintain a consistent distance from each other and from theguide opening edges. As such, the interior polymer region 350A iseffectively self-aligned to the guide opening edge 306.

Following the bake and/or cure performed at operation 215, the method201 continues to operation 220 where a semiconductor channel region ofthe transistor is defined within the interior of the guide opening byremoving one of the interior and exterior polymer regions selectively tothe other. In the exemplary embodiment illustrated in FIGS. 3D and 4D,the exterior polymer region 350B is removed (e.g., dissolved)selectively to the interior polymer region 350A. As further shown, theexterior polymer region 350B is also removed selectively to the mask 340such that two edges are defined at operation 220: an edge of theinterior polymer region 350A, and the guide opening edge 306 with theedge of the interior polymer region 350A being self-aligned to the guideopening edge 306.

An annular trench 375 is then etched through the channel semiconductorlayer 315 and the interior polymer region 350A removed, along with themask 340. The exposed portion of the channel semiconductor layer 325 maybe recessed with any etch process known in the art for the givensemiconductor material (Si, SiGe, etc.), to form a sidewall of a channelregion 315A associated with the transistor L_(g) aligned with an edge ofthe interior polymer region 350A. As used herein, “aligned” permits somenominal etch bias (positive or negative) to be incurred which may changethe CD of the channel region 315A from that of CD₂, but the dimension ofthe channel region 315A is nevertheless based on that of the interiorpolymer region 350A and as such, significantly smaller than thedimension of the guide opening (CD₁). For example, the sidewalls of thechannel region 315A may be aligned to the interior polymer region 350Awith an anisotropic etch through the channel region 315A followed by anisotropic etch that recesses the sidewalls of the channel region 315Arelative to the CD of the interior polymer region 350A. In oneembodiment where the guide opening CD₁ is less than 20 nm, the channelregion 315A has a CD₂ of less than 15 nm. The trench 375 may be stoppedon an underlying semiconductor material 310 (e.g., single crystallineSi, SiGe, Ge, etc.), on a basis of compositional etch selectivity or onthe basis of a timed etch, for example. Depending on the embodiment, theunderlying semiconductor material 310 is either already heavily doped toa particular conductivity typed, may be doped upon its exposure, or ispartially removed and regrown as a doped material. In the embodimentillustrated in FIGS. 3D and 4D, the semiconductor material 310 heavilydoped to function as a source/drain region (e.g., source/drain region111A and/or extrinsic source/drain region 111B in FIG. 1).

With the semiconductor channel region defined at operation 220, themethod 201 continues with depositing a gate material over a sidewall ofthe semiconductor channel region at operation 225. Generally, any gatedielectric deposition process known in the art may be performed,including deposition of a sacrificial gate dielectric which is to besubsequently replaced later in the fabrication process (e.g., as in aconventional “gate-last” type process flow). However, in the exemplaryembodiment, at operation 225, a non-sacrificial high-k (e.g., >9) gatedielectric 380 is deposited on the semiconductor surface exposed at thebottom of the trench 375 and on the trench sidewalls 380A and 380B. Asone example, a metal oxide, such as but not limited to HfO₂, or ZrO₂, isdeposited by atomic layer deposition at operation 225 as the gatedielectric 380.

The method 201 then completes with operation 230 where the semiconductorchannel region 315A is surrounded with a gate electrode material. In theexemplary embodiment, operation 230 comprises filling the cylindricaltrench 375 with a gate electrode material 390. The gate electrodematerial 390 may include any conventional gate electrode material, suchas but not limited to polysilicon, a work function metal, and/or a fillmetal. Techniques known in the art, such as but not limited todeposition and polish, may be utilized to planarize the gate electrodematerial 390 with the channel region 315A, or an overlying hardmasklayer. As shown in FIGS. 3E and 4E, the gate dielectric 380 electricallyisolates the gate electrode material 390 from the channel region 315A,as well as from the underlying source/drain region 310 and peripheralsemiconductor material 315B. Notably, the dimensions of the gateelectrode material 390 are therefore fully self-aligned to the guideopening edge 306 as well as self-aligned to the channel region 315A withonly the z-height thickness of the gate electrode material 390 left tovary as a function of the desired transistor channel length. Thevertical transistor can then be completed with conventional techniques(e.g., deposition or epitaxial growth of the source/drain semiconductor111D, on the exposed surface of the semiconductor channel region 315A,deposition of contact metallization, etc.).

FIGS. 5A-5F illustrate plan views of single-channel structures formed asoperations in the method 201 are performed, in accordance with analternate embodiment. FIGS. 6A-6F illustrate cross-sectional views ofthe structures illustrated in FIG. 5A-5F, in accordance with anembodiment. Generally, in the embodiment illustrated in FIGS. 5A-5F,operations 205-215 are as were described in the context of FIGS. 3A-3Dwith the exception that the mask 340 is deposited on a dielectric layer415 (e.g., Si_(x)N_(y), SiON, SiO₂, etc.) disposed over thesemiconductor layer 310. Following segregation of the co-polymers intothe interior polymer region 350A and exterior polymer region 350B, atoperation 220 the interior polymer region 350A is removed selectively tothe exterior polymer region 350B, as is illustrated in FIGS. 5D and 6D.In this exemplary embodiment, the mask 340 is also removed leaving anannular mask consisting of the exterior polymer region 350B. Thedielectric layer 415 is then etched to expose the underlying crystallinesurface of the semiconductor material 310. As shown in FIG. 6E, theoperation 220 further includes removing the exterior polymer region 350Band epitaxially growing (e.g., with MOCVD, etc.) the semiconductorchannel region 315A from the exposed crystalline semiconductor surfacewith the dielectric layer 415 serving as a growth stopping hardmask.Given the size of the semiconductor channel region 315A (e.g., <15 nm),the grown semiconductor material layer may have advantageously goodcrystallinity as a result of aspect ratio trapping. After formation ofthe semiconductor channel region 315A, the second portion of thedielectric layer 415 is recessed to form a cylindrical trench exposing asidewall of the semiconductor channel region. In the exemplaryembodiment depicted, the dielectric layer 415 is completely removed,exposing a surface of the semiconductor layer 310. For one suchembodiment, the semiconductor layer 310 is appropriately doped to serveas the source/drain semiconductor region of the nanowire transistor withthe channel region 315A then epitaxially grown directly a surface of thesource/drain semiconductor region.

As shown in FIGS. 5F and 6F, the method 201 then continues throughoperation 225 to form the gate dielectric on the sidewalls 380A, overthe semiconductor material layer 310 and on the sidewalls 380B,substantially as is described elsewhere herein in reference to FIGS. 3Eand 4E. The gate electrode material 390 is then deposited at operation230 to again surround the channel region 315A.

While FIGS. 3A-3E and 4A-4E, as well as FIGS. 5A-5F and 6A-6F,illustrate single channel embodiments of the method 201, FIGS. 7A-7Cillustrate plan views of dual-channel structures formed as operations inthe method 201 are performed, in accordance with an embodiment. FIGS.8A-8C further illustrate cross-sectional views of the structuresillustrated in FIG. 7A-7C. Generally, the method 201 is practicedsubstantially as described elsewhere herein for single-channelembodiments with the DSA material defining two (or more) interiorpolymer regions, each of which becomes the basis for defining asemiconductor channel region of a vertical nanowire transistor. For suchmulti-channel embodiments, the DSA material is leveraged to self-alignthe channel regions to a surrounding gate and also reduce pitch betweenadjacent channel regions relative to the pitch employed to print theguide openings. In exemplary embodiments, the pitch of two adjacentchannel regions is below the resolution limit of a scanner employed toprint the guide openings.

FIGS. 7A and 8A illustrate the guide opening 315 initially patterned(e.g., printed or etched) into the mask 340 (e.g., at operation 205) islarger in a first dimension (e.g., axis B₁) than in a second dimension(e.g., axis A₁). Generally, the longer length B₁ exceeds a thresholdcharacteristic of the DSA material (e.g., 40 nm) while the shorterlength A₁ does not (e.g., A₁ may be approximately the diameter of aguide opening for a single-channel embodiment (e.g., less than 20 nm).In embodiments, the longer length B₁ is at least twice the shorterlength A₁. For certain surface conditions, such an elongated guideopening 315, when filled with a DSA material having proper co-polymerproperties, anneals into the two interior polymer regions 350A₁ and350A₂ illustrated in FIGS. 7B and 8B. Both of the interior polymerregions 350A₁ and 350A₂ are surrounded by a contiguous exterior polymerregion 350B with the material properties of each segregated region beingas described elsewhere herein in the context of single-channelembodiments. Upon segregation, the interior polymer regions 350A₁ and350A₂ have essentially identical dimensions (e.g., CD₃ as shown in FIG.8C). In the exemplary embodiments where the guide opening has at leastone dimension that is less than 20 nm, the interior polymer regions350A₁ and 350A₂ each have a width that is less than 15 nm, and infurther such embodiments the pitch of the interior polymer regions 350A₁and 350A₂ is also less than 15 nm.

With the plurality of interior polymer regions 350A₁ and 350A₂materially distinguished from the exterior polymer region 350B, themethod 201 proceeds through operations 220, 225, 230 substantially asdescribed for single-channel embodiments (e.g., as illustrated either byFIGS. 3A-3E, 4A-4E) to define the channel semiconductor layer 315 intothe two channel regions 315A₁ and 315A₂ controlled by a shared gateelectrode 390 through the gate dielectrics 350A₁ and 350A₂,respectively. As such, segregation capabilities of the DSA material maybe utilized to make multi-wired vertical transistors which may beindividually sized for optimal gate control (reduced short channeleffects) while providing a desired amount of drive current (determinedby the number of discrete channels formed).

In embodiments, not only are the channel region and gate of a verticaltransistor defined based on segregation of a DSA material, so too areother functional regions of the transistor, such as, but not limited to,the source drain regions, as illustrated by the FIGS. 9A-9E and 10A-10G.FIGS. 9A, 9B, 9C, 9D, and 9E illustrate cross-sectional views ofsingle-channel structures formed as operations in the method of FIG. 2Bare performed, in accordance with an embodiment. Generally, in thisexemplary embodiment, source/drain regions, as well as the channelregion, of a vertical nanowire transistor are regrown in regions definedby segregation of a DSA material.

FIG. 9A begins at the completion of operation 215 where DSA material hasbeen segregated in the interior polymer region 350A and exterior polymerregion 350B. The substrate in this embodiment includes a dielectriclayer 925 disposed over a degenerately doped semiconductor layer 945,that is further disposed over a crystalline semiconductor substratelayer 903. The interior polymer region 350A is removed selectively tothe exterior polymer region 350B, as described elsewhere herein, andalso selectively to the mask 340, as shown in FIG. 9B. An interiortrench is then etched through the dielectric layer 925 and the layer 945in the region where the interior polymer region 350A was removed toexpose the semiconductor 903. With the mask 340 then removed, aperipheral portion of the dielectric layer 925 is removed to leave anannular perimeter of dielectric 925 surrounding the interior trench. Aselective epitaxial process is then employed to form the nanowiretransistor from the seeding surface of the exposed semiconductorsubstrate layer 903 within the interior trench and periphery region. Asshown in FIG. 9D, a first (bottom) crystalline source/drainsemiconductor layer 310 is grown from the semiconductor substrate layer903 and from the semiconductor layer 945. Regrowth of the source/drainsemiconductor layer 310 may improve crystallinity in the channel regionsubsequently grown as advantageous defect trapping may occur in thesource/drain semiconductor layer 310. Furthermore, regrowth of thesource/drain semiconductor layer 310 serves to selectively form aconnection to the now embedded conductive semiconductor layer 945 withcrystalline or polycrystalline semiconductor formed over thesemiconductor layer 945. A semiconductor channel region 315 is thenepitaxially grown from the source/drain semiconductor layer 310. Asecond (top) source/drain semiconductor layer 320 is further grown overthe semiconductor channel region 315. The regrown film is polished backto planarize against the dielectric layer 925 as a polish stop. Due toinitial non-planarity between the interior trench and the periphery, theplanarization process removes the regrown semiconductor in the peripheryback to the bottom source/drain semiconductor layer 310 while the topsource/drain semiconductor layer 320 is retaining in the interior regionas a portion of the vertical nanowire transistor.

The gate dielectric is formed at operation 220 by first recessing theannular portion of the dielectric layer 925 remaining where the exteriorpolymer region 350B was originally disposed. This exposes a sidewall ofthe semiconductor channel region 315. The dielectric layer 925 may becompletely recessed with an etch selective to the underlying conductivelayer 945, in which case the gate dielectric formed at operation 225serves to insulate the gate electrode material 390 from the conductivelayer 945. Alternatively, the dielectric layer 925 may be recessed onlypartially (e.g., with a timed etch back) to increase the thickness ofdielectric between the gate electrode material 390 and underlyingconductive layer 945. As such, the top surface of the vertical nanowiretransistor structure illustrated in FIG. 9E is planarized and providestop-side access to all functional regions of the transistor for contact(e.g., silicidation) and interconnect metallization.

FIGS. 10A, 10B, 10C, 10D, and 10E illustrate cross-sectional views ofsingle-channel structures formed as operations in the method of FIG. 2Bare performed, in accordance with an embodiment. In this exemplaryembodiment, a stack of semiconductor materials including twosource/drain layers and a channel layer are etched based on a DSAmaterial. This embodiment may therefore be considered a special case ofthe embodiment illustrated by FIGS. 3A-3E, 4A-4E. FIG. 10A begins withthe DSA material segregated into the interior and exterior polymerregions 350A, 350B. The substrate includes a semiconductor materiallayer stack including compositionally distinct (through either doping ordiffering lattice atoms) material layers. For the exemplary embodiment,the semiconductor material stack includes a bottom source/drain layer1010 disposed on a substrate 1003, a channel layer 1015 disposed on thebottom source/drain layer 1010, and a top source/drain layer 1020disposed over the channel layer 1015. Disposed over the semiconductorstack is a dielectric (hardmask) layer 1030.

As shown in FIG. 10B, the exterior polymer region 350B is removedselectively to the interior polymer region 350A and the mask 340. Anannular trench is then etched through most of the stack to expose thebottom source/drain layer 1010, as shown in FIG. 10C. A dielectricspacer 1040 (FIG. 10D) is formed along sidewalls of the semiconductorstacks and a silicide 1050 is formed on the exposed both source/drainlayer 1010. Dielectric material 1060 is then deposited within thetrench, planarized, and recessed (etched back) to a z-height (thickness)sufficient to re-expose the channel region sidewall. An isotropic etchremoves the dielectric spacer 1040 and the gate dielectric 380 isdeposited in the trench over the recessed dielectric material 1060 an onthe channel semiconductor sidewall. The gate electrode material is thendeposited in the trench, planarized with a top surface of the dielectric1030 and then recess etched to a z-height (thickness) sufficient tocontrol the channel region. Finally, a dielectric 1070 is deposited inthe trench, planarized with the top surface of the dielectric 1030. Thedielectric 1030 may then be removed selectively to the dielectric 1070to expose the top source/drain 1020 in preparation for contactmetallization. Hence, the vertically-oriented nanowire transistor withsub-lithographic wire dimensions (e.g., <15 nm) are self-alignedlyfabricated, along with local interconnects, on the basis of a singlelithographic mask and DSA material.

FIG. 11 is a functional block diagram of a SOC implementation of amobile computing platform, in accordance with an embodiment of thepresent invention. The mobile computing platform 1100 may be anyportable device configured for each of electronic data display,electronic data processing, and wireless electronic data transmission.For example, mobile computing platform 1100 may be any of a tablet, asmart phone, laptop computer, etc. and includes a display screen 1105,the SOC 1110, and a battery 1115. As illustrated, the greater the levelof integration of the SOC 1110, the more of the form factor within themobile computing device 1100 that may be occupied by the battery 1115for longest operative lifetimes between charging, or occupied by memory(not depicted), such as a solid state drive, DRAM, etc., for greatestplatform functionality.

The SOC 1110 is further illustrated in the expanded view 1120. Dependingon the embodiment, the SOC 1110 includes a portion of a siliconsubstrate 1160 (i.e., a chip) upon which one or more of a powermanagement integrated circuit (PMIC) 1115, RF integrated circuit (RFIC)1125 including an RF transmitter and/or receiver, a controller thereof1111, and one or more central processor core, or memory 1177. Inembodiments, the SOC 1110 includes one or more vertical nanowiretransistors (FETs) in conformance with one or more of the embodimentsdescribed herein. In further embodiments, manufacture of the SOC 1110includes one or more of the methods described herein for fabricating avertically-oriented nanowire transistor (FET).

FIG. 12 is a functional block diagram of a computing device 1200 inaccordance with one embodiment of the invention. The computing device1200 may be found inside the platform 1100, for example, and furtherincludes a board 1202 hosting a number of components, such as but notlimited to a processor 1204 (e.g., an applications processor) and atleast one communication chip 1206. In embodiments, at least theprocessor 1204 includes a vertical nanowire transistor (FET) havingstructures in accordance with embodiments describe elsewhere herein,and/or fabricated in accordance with embodiments further describedelsewhere herein. The processor 1204 is physically and electricallycoupled to the board 1202. The processor 1204 includes an integratedcircuit die packaged within the processor 1204. The term “processor” mayrefer to any device or portion of a device that processes electronicdata from registers and/or memory to transform that electronic data intoother electronic data that may be stored in registers and/or memory.

In some implementations the at least one communication chip 1206 is alsophysically and electrically coupled to the board 1202. In furtherimplementations, the communication chip 1206 is part of the processor1204. Depending on its applications, computing device 1200 may includeother components that may or may not be physically and electricallycoupled to the board 1202. These other components include, but are notlimited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., RAMor ROM) in the form of flash memory or STTM, etc., a graphics processor,a digital signal processor, a crypto processor, a chipset, an antenna,touchscreen display, touchscreen controller, battery, audio codec, videocodec, power amplifier, global positioning system (GPS) device, compass,accelerometer, gyroscope, speaker, camera, and mass storage device (suchas hard disk drive, solid state drive (SSD), compact disk (CD), and soforth).

At least one of the communication chips 1206 enables wirelesscommunications for the transfer of data to and from the computing device1200. The term “wireless” and its derivatives may be used to describecircuits, devices, systems, methods, techniques, communicationschannels, etc., that may communicate data through the use of modulatedelectromagnetic radiation through a non-solid medium. The term does notimply that the associated devices do not contain any wires, although insome embodiments they might not. The communication chip 1206 mayimplement any of a number of wireless standards or protocols, includingbut not limited to those described elsewhere herein. The computingdevice 1200 may include a plurality of communication chips 1206. Forinstance, a first communication chip 1206 may be dedicated to shorterrange wireless communications such as Wi-Fi and Bluetooth and a secondcommunication chip 1206 may be dedicated to longer range wirelesscommunications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, andothers.

It is to be understood that the above description is intended to beillustrative, and not restrictive. For example, while flow diagrams inthe figures show a particular order of operations performed by certainembodiments of the invention, it should be understood that such order isnot required (e.g., alternative embodiments may perform the operationsin a different order, combine certain operations, overlap certainoperations, etc.). Furthermore, many other embodiments will be apparentto those of skill in the art upon reading and understanding the abovedescription. Although the present invention has been described withreference to specific exemplary embodiments, it will be recognized thatthe invention is not limited to the embodiments described, but can bepracticed with modification and alteration within the spirit and scopeof the appended claims. The scope of the invention should, therefore, bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

What is claimed is:
 1. A method of forming a nanowire transistor on asubstrate, the method comprising: forming a guide opening in a masklayer disposed over a disposed over a dielectric layer disposed over adoped semiconductor layer disposed over a substrate; depositing adirected self-assembly (DSA) material into the guide opening;segregating the DSA material into an interior polymer region completelysurrounded by an exterior polymer region within the guide opening, theinterior polymer region having a cylindrical geometry having a diameter;removing the interior polymer region selectively to the exterior polymerregion; forming a trench in the dielectric layer and the dopedsemiconductor layer wherein the trench has a diameter defined by thediameter of the cylindrical geometry of the interior polymer region;removing the mask layer and a peripheral portion of the dielectric layerbeneath the mask layer to form an annular portion of the dielectriclayer surrounding the trench; removing the exterior polymer region;depositing a first source/drain semiconductor material in the trench;depositing a channel semiconductor material on the first source/drainsemiconductor material in the trench; depositing a second source/drainsemiconductor material on the channel semiconductor material in thetrench; removing at least a portion of the annular portion of thedielectric layer surrounding the trench to form a gate trenchsurrounding the channel semiconductor material; depositing a gatedielectric in the gate trench adjacent to and surrounding the channelsemiconductor material; and depositing a gate electrode in the gatetrench adjacent the gate dielectric layer in the gate trench andsurrounding the channel semiconductor material.
 2. The method of claim 1wherein removing at least a portion of the annular portion of thedielectric layer comprises removing all of the annular portion of thedielectric layer.
 3. The method of claim 1 wherein removing at least aportion of annular portion of the dielectric layer comprises removingonly a portion of the annular portion of the dielectric layer andleaving a lower portion of the annular portion of the dielectric layerand wherein forming the gate dielectric layer comprises forming the gatedielectric layer on the lower portion of the annular portion of thedielectric layer.
 4. The method of claim 1 wherein forming the guideopening comprises lithographically patterning a curved guide.
 5. Themethod of claim 1 wherein forming the guide opening compriseslithographically patterning a circular guide opening.
 6. The method ofclaim 1 wherein segregating the DSA material comprises baking and/orcuring the DSA material.
 7. The method of claim 1 further comprisingpolishing the second source/drain semiconductor material so that thesecond source/drain semiconductor material in the trench is planar witha top surface of the annular portion of the dielectric layer.
 8. Themethod of claim 1, wherein depositing the DSA material into the guideopening further comprises spin coating a DSA material comprising firstand second polymeric materials; and wherein segregating the DSA materialfurther comprises curing the DSA material at a temperature and for aduration sufficient to permit the first polymeric material to migrateinto the interior polymer portion while the second polymeric materialmigrates into the exterior polymer portion
 10. The method of claim 9,wherein one of the first and second polymeric materials comprises PMMA.11. The method of claim 10, wherein the other of the first and secondpolymeric material comprises polystyrene.
 12. The method of claim 9,wherein the mask layer comprises one of the first and second polymericmaterials.